schottky barrier diode lrb520s - 30t1g maximum ratings (t a = 25 c) parameter symbol limits unit dc reverse voltage v r 30 v mean rectifying current i o 200 ma peak forward surge current i fsm 1a junction temperature t j 125 c storage temperature t stg -40~+125 c electrical characteristics( t a = 25 c ) parameter symbol min. ty p max. unit conditions forward voltage v f -- 0.60 v i f =200ma reverse current i r -- 1.0 av r =10v z applications low current rectification and high speed switching z features extremelysmall surface mounting type. (sc-79/sod523) low reverse current extremely fast switching speed z construction silicon epitaxial planar 1 2 cathode anode sod523/sc-79 1 2 device marking and ordering information device marking shipping lrb520s-30t1g 5j 3000/tape&reel lrb520s-30t3g 5j 10000/tape&reel leshan radio company, ltd. we declare that the material of product compliance with rohs requirements. extremely low forward voltage 0.6 v (max) @ if = 200ma z rev.o 1/3
electrical characteristic curves (ta=25 o c) fig. 1 forward characteristics fig. 2 reverse characteristics 0102030 1 10 100 reverse voltage : v r (v) capacitance between terminals : c t (pf) fig. 3 capacitance between terminals characteristics f= 1mhz 0 0 20 40 60 80 100 25 50 75 100 125 io current (%) ambient temperature : ta ( o c) fig 4. derating curve (mounting on glass epoxy pcbs) lrb520s - 30t1g leshan radio company, ltd. 1 10 100 0 102030 capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics capacitance between terminals:ct(pf) ct dispersion map 0 5 10 15 20 25 30 35 40 45 50 ave:28.2pf ta=25 f=1mhz vr=0v n=10pcs f=1mh 10 100 1000 10000 0.001 0.1 10 1000 rth(j-a) rth(j-c) 0 0.1 0.2 0.3 0 0.1 0.2 0.3 0.4 0.5 ifsm disresion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics 0 5 10 15 20 25 30 ave:5.60a 8.3ms ifsm 1cyc 0 5 10 1 10 100 8.3ms ifsm 1cyc 8.3ms 0 5 10 1 10 100 t ifsm time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) forward power dissipation:pf(w) average rectified forward currentio(a) io-pf characteristics reverse power dissipation:p r (w) reverse voltage:vr(v) vr-p r characteristics 0 0.002 0.004 0.006 0.008 0.01 0 5 10 15 20 25 30 dc d=1/2 sin(?180) dc d=1/2 sin(?180) 1ms im=10ma if=100ma 300us time mounted on epoxy board 25 75 100 125 25 75 100 125 -25 forward current : i f (a) -25 reverse current : i r ( m a) forward voltage:v f (mv) reverse voltage:v r (v) 0.00001 0.0001 0.001 0.01 0.1 1 0 10 20 30 40 50 0.001 0.01 0.1 1 0 100 200 300 400 500 600 rev.o 2/3
sc - 79/sod - 523 lrb520s-30t1g leshan radio company, ltd. notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, pro- trusions, or gate burrs. dim min nom max millimeters d 1.10 1.20 1.30 e 0.70 0.80 0.90 a 0.50 0.60 0.70 b 0.25 0.30 0.35 c 0.07 0.14 0.20 l 0.30 ref h 1.50 1.60 1.70 e l2 0.15 0.20 0.25 e d ? x ? ? y ? b 2x m 0.08 x y a h c 12 e top view side view soldering footprint* recommended 2x 0.48 0.40 2x 1.80 dimension: millimeters package outline rev.o 3/3
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